Isolation Features and Methods of Fabricating the Same

ABSTRACT

Semiconductor devices and methods of fabricating semiconductor devices are provided. The present disclosure provides a semiconductor device that includes a first fin structure and a second fin structure each extending from a substrate; a first gate segment over the first fin structure and a second gate segment over the second fin structure; first isolation feature separating the first and second gate segments; a first source/drain (S/D) feature over the first fin structure and adjacent to the first gate segment; a second S/D feature over the second fin structure and adjacent to the second gate segment; and a second isolation feature also disposed in the trench. The first and second S/D features are separated by the second isolation feature, and a composition of the second isolation feature is different from a composition of the first isolation feature.

PRIORITY DATA

The present application claims priority to Provisional PatentApplication Ser. No. 62/589,136, filed on Nov. 21, 2017, entitled“ISOLATION FEATURES AND METHODS OF FABRICATING THE SAME,” herebyincorporated by reference in its entirety.

BACKGROUND

The electronics industry has experienced an ever increasing demand forsmaller and faster electronic devices which are simultaneously able tosupport a greater number of increasingly complex and sophisticatedfunctions. Accordingly, there is a continuing trend in the semiconductorindustry to manufacture low-cost, high-performance, and low-powerintegrated circuits (ICs). Thus far these goals have been achieved inlarge part by scaling down semiconductor IC dimensions (e.g., minimumfeature size) and thereby improving production efficiency and loweringassociated costs. However, such scaling has also introduced increasedcomplexity to the semiconductor manufacturing process. Thus, therealization of continued advances in semiconductor ICs and devices callsfor similar advances in semiconductor manufacturing processes andtechnology.

Multi-gate devices have been introduced in an effort to improve gatecontrol by increasing gate-channel coupling, reduce OFF-state current,and reduce short-channel effects (SCEs). One such multi-gate device thathas been introduced is the fin field-effect transistor (FinFET). TheFinFET gets its name from the fin-like structure which extends from asubstrate on which it is formed, and which is used to form the FETchannel. FinFETs are compatible with conventional complementarymetal-oxide-semiconductor (CMOS) processes and their three-dimensionalstructure allows them to be aggressively scaled while maintaining gatecontrol and mitigating SCEs. In addition, metal gate electrodes havebeen introduced as a replacement to polysilicon gate electrodes. Metalgate electrodes provide a number of advantages over polysilicon gateelectrodes such as avoidance of the polysilicon depletion effect,work-function tuning by selection of appropriate gate metal(s), as wellas other benefits. By way of example, a metal gate electrode fabricationprocess may include a metal layer deposition followed by a subsequentmetal layer cut process (or metal gate cut process). The metal layer cutprocess sometimes forms a trench that not only dissects the metal gate,but also goes through an inter-layer dielectric (ILD) layer near thesource/drain (S/D) features. A dielectric material may be subsequentlyfilled into this trench. However, existing trench-filling material andmethod have some limitations. For example, the trench-filling materialmay have different etch selectivity than the ILD layer, which maysometimes cause hillocks in the S/D contact landing area. These hillocksmay increase contact resistance of the S/D contact and reduce yield.

Thus, existing techniques have not proved entirely satisfactory in allrespects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A and 1B depict a flow chart of a method of fabricating asemiconductor device, according to one or more embodiments of thepresent disclosure;

FIG. 2 is a top-view of a semiconductor device and a metal gate cutpattern, in accordance with some embodiments;

FIG. 3 is a top view of a semiconductor device with metal gatestructures, in which a metal gate cut has been performed, in accordancewith embodiments of the present disclosure;

FIGS. 4A, 5A, 6A, 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A, 11B, 13A, 13B,14A, and 14B show cross-sectional views of a metal gate structure alonga plane substantially parallel to a plane defined by section AA′ of FIG.3, and fabricated according to an embodiment of the method of FIGS. 1Aand 1B;

FIGS. 4B, 5B, 6B, 7C, 8C, 9C, 10C, 11C, 13C, and 14C showcross-sectional views of a S/D contact landing area along a planesubstantially parallel to a plane defined by section BB′ of FIG. 3, andfabricated according to an embodiment of the method of FIGS. 1A and 1B;

FIG. 12A is a top view of a semiconductor device with metal gatesegments separated by a first isolation feature and covered bydielectric layers, in accordance with another embodiment of the presentdisclosure; and

FIG. 12B is a top view of a semiconductor device with metal gatesegments separated by a first isolation feature and covered bydielectric layers, in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It is also noted that the present disclosure presents embodiments in theform of multi-gate transistors or fin-type multi-gate transistorsreferred to herein as FinFET devices. Such a device may include a P-typemetal-oxide-semiconductor FinFET device or an N-typemetal-oxide-semiconductor FinFET device. The FinFET device may be adual-gate device, tri-gate device, bulk device, silicon-on-insulator(SOI) device, and/or other configuration. One of ordinary skill in theart may recognize other embodiments of semiconductor devices that maybenefit from aspects of the present disclosure. For example, someembodiments as described herein may also be applied to gate-all-around(GAA) devices, Omega-gate (Ω-gate) devices, or Pi-gate (H-gate) devices.In other embodiments, a planar device may be fabricated using one ormore of the structures or methods discussed herein.

It is also noted that the illustrated Figures are exemplary of portionsof a device formed on a substrate, as such, in some examples two finsare illustrated, in others additional fins are illustrated, in someexamples two gates are illustrated, in others a single gate oradditional gates are illustrated. As understood by one of ordinary skillin the art, a plurality of gates and fins are typically present in asemiconductor device and thus, the quantity of the gates or finsillustrated in the figures is for reference only and not intended to belimiting in its application.

The present application is generally related to isolation features andrelated methods. In particular, the present disclosure is directed toisolation features formed in a trench resulted from a metal gate cutprocess. Metal gate electrodes have been introduced as a replacement topolysilicon gate electrodes. Metal gate electrodes provide a number ofadvantages over polysilicon gate electrodes such as avoidance of thepolysilicon depletion effect, work-function tuning by selection ofappropriate gate metal(s), as well as other benefits. By way of example,a metal gate electrode fabrication process may include metal layer(s)deposition. Having formed metal gates extending across regions of thesubstrate, it may be necessary to “cut” or separate certain metal gatelines into segments isolated from one another to provide thetransistor-level functionality required by the design. Thus, theformation of the metal gate electrode may be followed by a subsequentmetal gate cut process. The metal gate cut process creates a trench thatnot only dissects a metal gate into two segments but also goes throughILD adjacent to the S/D features. To prevent oxidation of the metal gateelectrode due to oxygen diffusion, an oxygen-free dielectric material,such as silicon nitride and silicon carbide nitride, is deposited in thetrench to form an isolation feature.

Embodiments of the present disclosure offer advantages over the existingart, though it is understood that other embodiments may offer differentadvantages, not all advantages are necessarily discussed herein, and noparticular advantage is required for all embodiments. Generally, and inaccordance with embodiments disclosed herein, isolation features andrelated structures are provided. At least some embodiments of thepresent disclosure may be used to form different isolation features inthe trench between newly cut metal segments of the metal gate structureand within the ILD adjacent to the S/D features. For example, when theS/D features and adjacent ILD are subsequently recessed to prepare forthe formation of S/D contacts, the oxygen-free dielectric isolationfeature in the ILD experiences an etching rate slower than that of theILD, resulting in oxygen-free dielectric hillocks in the S/D contactlanding area. These hillocks are observed to increase contact resistanceof the S/D contact and reduce yield. To mitigate one or more of theissues, the present disclosure provides different isolation features inthe trench between newly-cut segments of the gate structure and withinthe ILD in some embodiments, so as to improve contact resistance in theS/D contact landing area.

Illustrated in FIGS. 1A and 1B is a method 10 of fabricating asemiconductor device, such as the semiconductor device 100 shown inFIGS. 2-14C, according to embodiments of the present disclosure. Themethod 10 is merely an example, and is not intended to limit the presentdisclosure beyond what is explicitly recited in the claims. Additionaloperation can be provided before, during, and after the method 10, andsome operations can be replaced, eliminated, or moved around foradditional embodiments of the method. The method 10 is described belowin conjunction with FIGS. 2-14C, which are cross-sectional and top viewsof the semiconductor device 100 in various stages of a manufacturingprocess.

The semiconductor device 100 is provided for illustration purposes anddoes not necessarily limit the embodiments of the present disclosure toany number of devices, any number of regions, or any configuration ofstructures or regions. Furthermore, the semiconductor device 100 asshown in FIGS. 2-14C may be an intermediate device fabricated duringprocessing of an IC, or a portion thereof, that may comprise staticrandom access memory (SRAM) and/or logic circuits, passive componentssuch as resistors, capacitors, and inductors, and active components suchas p-type field effect transistors (PFETs), n-type FETs (NFETs),multi-gate FETs such as FinFETs, metal-oxide semiconductor field effecttransistors (MOSFETs), complementary metal-oxide semiconductor (CMOS)transistors, bipolar transistors, high voltage transistors, highfrequency transistors, other memory cells, and combinations thereof.

Referring to FIG. 1A, at operation 12, the method 10 provides astructure of the semiconductor device 100 as shown in FIG. 2. Referringnow to FIG. 2, the structure includes a first fin structure 104A, asecond fin structure 104B, a gate stack (or metal gate) 106A, anothergate stack (or metal gate) 106B, a first S/D feature 105A over the firstfin structure 104A, a second S/D feature 105B over the second finstructure 104B, and an oxygen containing dielectric layer 103 over thefirst and second S/D features 105A and 105B. The various structuresabove are disposed over a substrate 102. The gate stacks 106A and 106Bextend lengthwise over the first and second fin structures 104A and 104Balong a direction “y” generally perpendicular to the lengthwisedirection “x” of the first and second fin structure 104A and 104B. Thefirst and second S/D features 105A and 105B are adjacent to the gatestack 106A.

The substrate 102 is a silicon (Si) substrate in the present embodiment.In alternative embodiments, the substrate 102 includes other elementarysemiconductors such as germanium (Ge); a compound semiconductor such assilicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs),and indium phosphide (InP); or an alloy semiconductor, such as silicongermanium carbide (SiGeC), gallium arsenic phosphide (GaAsP), andgallium indium phosphide (GaInP). In embodiments, the substrate 102 mayinclude silicon on insulator (SOI) substrate, be strained and/orstressed for performance enhancement, include epitaxial regions, dopedregions, and/or include other suitable features and layers.

The first and second fin structures 104A and 104B may be patterned byany suitable method. For example, the first and second fin structures104A and 104B may be patterned using one or more photolithographyprocesses, including double-patterning or multi-patterning processes.Generally, double-patterning or multi-patterning processes combinephotolithography and self-aligned processes, allowing patterns to becreated that have, for example, pitches smaller than what is otherwiseobtainable using a single, direct photolithography process. For example,in one embodiment, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers, ormandrels, may then be used as a masking element for patterning the firstand second fin structures 104A and 104B. For example, the maskingelement may be used for etching recesses into the substrate 102, leavingthe first and second fin structures 104A and 104B on the substrate 102.The etching process may include dry etching, wet etching, reactive ionetching (RIE), and/or other suitable processes. For example, a dryetching process may implement an oxygen-containing gas, afluorine-containing gas (e.g., CF₄, SF₆, CH₂F₂, CHF₃, and/or C₂F₆), achlorine-containing gas (e.g., Cl₂, CHCl₃, CCl₄, and/or BCl₃), abromine-containing gas (e.g., HBr and/or CHBR₃), an iodine-containinggas, other suitable gases and/or plasmas, and/or combinations thereof.For example, a wet etching process may comprise etching in dilutedhydrofluoric acid (DHF); potassium hydroxide (KOH) solution; ammonia; asolution containing hydrofluoric acid (HF), nitric acid (HNO₃), and/oracetic acid (CH₃COOH); or other suitable wet etchant. Numerous otherembodiments of methods to form the first and second fin structures 104Aand 104B may be suitable. Although the first and second fin structures104A and 104B are illustrated in FIG. 2 as each containing one fin, thefirst and second fin structures 104A and 104B may include more than onefin. For illustration purposes and not to limit the scope of the presentdisclosure, each of the first and second fin structures 104A and 104Bshown in FIGS. 4A, 4B, 5A, 5B, 6A, 6B, 7A, 7B, 7C, 8A, 8B, 8C, 10A, 10B,10C, 11A, 11B, 11C, 13A, 13B, 13C, and 14A, 14B, and 14C includes twofins.

The S/D features 105A and 105B may include epitaxial semiconductormaterials, for example, for applying proper stress and enhancingperformance of the device 100. For example, the S/D features 105A mayinclude epitaxially grown silicon (Si) or silicon carbide (SiC), and theS/D features 105B may include epitaxially grown silicon germanium(SiGe). Further, the S/D features 105A and 105B may be doped with properdopants suitable for the respective n-type and p-type devices. Forexample, the S/D features 105A may be doped with an n-type dopant suchas phosphorus (P) or arsenic (As), and the S/D features 105B may bedoped with a p-type dopant such as boron (B) or indium (In). In oneimplementation, the S/D feature 105A is formed of epitaxially grownsilicon doped with phosphorous and the S/D feature 105B is formed ofepitaxially grown silicon germanium doped with boron. In an embodiment,the S/D features 105A and 105B are formed (separately) by etching thefirst and second fin structures 104A and 104B, epitaxially growing aproper semiconductor material over the first and second fin structures104A and 104B, and doping (in-situ or ex-situ) appropriate dopants intothe epitaxially grown material. In instances where the first and secondfin structures 104A and 104B each includes two fins, the S/D features ofindividual fins may be separated from each other (not shown) or maymerge to form a larger S/D features, such as the S/D features 105A and105B in FIG. 4B. Furthermore, each of the S/D features 105A and 105B maybe of a multi-facet shape.

The oxygen containing dielectric layer 103, sometimes referred to as theILD layer 103, may include, as non-limiting examples of its composition,silicon dioxide, silicon oxynitride, carbon containing dielectrics,TEOS, and combinations of these, and may be low-k, high-k or oxidedielectric, and may be formed of other known materials for ILD layers.It is noted that the oxygen containing dielectric layer 103 isillustrated as a single layer but the device may also include otherdielectric materials such as additional spacer elements, etch stoplayers, and the like.

Each of the gate stacks 106A and 106B is a multi-layer structure. Forexample, each of the gate stacks 106A and 106B may include a dielectricinterfacial layer, a high-k gate dielectric layer over the dielectricinterfacial layer, a work function layer over the gate dielectric layer,and a gate electrode layer over the work function layer. As both thework function layer and the gate electrode layer are conductive,sometimes they can be generally referred to as a conductive layer. Invarious embodiments, the dielectric interfacial layer may include adielectric material such as silicon oxide (SiO₂) or silicon oxynitride(SiON), and may be formed by chemical oxidation, thermal oxidation,atomic layer deposition (ALD), chemical vapor deposition (CVD), and/orother suitable methods. The high-k gate dielectric layer may includehafnium oxide (HfO₂), zirconium oxide (ZrO₂), lanthanum oxide (La₂O₃),titanium oxide (TiO₂), yttrium oxide (Y₂O₃), strontium titanate(SrTiO₃), other suitable metal-oxides, or combinations thereof; and maybe formed by ALD and/or other suitable methods. The gate electrode layermay include polysilicon or a metal such as aluminum (Al), tungsten (W),cobalt (Co), copper (Cu), and/or other suitable materials. The workfunction layer may be p-type (for gate stacks 106B) or n-type (for gatestacks 106A). The p-type work function layer comprises a metal with asufficiently large effective work function, selected from but notrestricted to the group of titanium nitride (TiN), tantalum nitride(TaN), ruthenium (Ru), molybdenum (Mo), tungsten (W), platinum (Pt), orcombinations thereof. The n-type work function layer comprises a metalwith sufficiently low effective work function, selected from but notrestricted to the group of titanium (Ti), aluminum (Al), tantalumcarbide (TaC), tantalum carbide nitride (TaCN), tantalum silicon nitride(TaSiN), or combinations thereof. The p-type or n-type work functionlayer may include a plurality of layers and may be deposited by CVD,PVD, ALD, and/or other suitable process.

Although not shown, sidewalls of the gate stacks 106A and 106B arecovered by a gate spacer. The gate spacer may be a single layer ormulti-layer structure. In some embodiments, the gate spacer includes adielectric material, such as silicon oxide (SiO₂), silicon nitride(SiN), silicon oxynitride (SiON), other dielectric material, orcombination thereof. In an example, the gate spacer is formed by blanketdepositing a first layer (e.g., a SiO₂ layer having a uniform thickness)as a liner layer over the device 100 having the gate stacks 106A and106B, and another dielectric layer (e.g., a SiN layer) as a mainD-shaped spacer over the first dielectric layer, and then,anisotropically etching to remove portions of the dielectric layers toform the gate spacer. In some embodiments, to prevent degradation of thework function layers and metal layers due to oxidation, the workfunction layers and metal layers of the gate stacks 106A and 106B areprotected by one or more barrier layers such that they are not in directcontact with any oxygen containing materials.

What is also shown in FIG. 2 is a metal gate cut pattern 108 (sometimescan also be referred to as “a cut metal gate pattern” or “a gate cutpattern”). The metal gate cut pattern 108 is generally parallel to thelengthwise direction of the first and second fin structures 104A and104B. With respect to the gate stacks 106A and 106B, the metal gate cutpattern 108 is generally perpendicular to the lengthwise direction ofthe first and second gate stacks 106A and 106B.

Referring now to FIG. 3, at operation 14 (FIG. 1A) of the method 10, ametal gate cut process is performed by etching a trench 118 into thegate stacks 106A, 106B and the oxygen containing dielectric layer 103(the ILD 103). The trench 118 extends along a direction that isgenerally perpendicular to the lengthwise direction of the gate stacks106A and 106B, and separates the gate stack 106A into a gate segment106A1 and a gate segment 106A2. Similarly, the trench 118 separates thegate stack 106B into a gate segment 106B1 and a gate segment 106B2. Thetrench 118 also includes a trench bottom 128 as shown in FIG. 3. Thetrench bottom 128 defines how deep the trench 118 is etched into thegate stacks 106A and 106B.

Reference is now made to FIGS. 4A and 4B. FIG. 4A illustrates across-sectional view of the gate segments 106A1 and 106A2 along a “y-z”plane substantially parallel to a plane defined by section AA′ of FIG.3. To ensure that the trench 118 completely separates the gate segment106A1 from the gate segment 106A2, the trench bottom 128 of the trench118 should be below a bottom surface of the gate segments 106A1 and106A2, as shown in FIG. 4A. In implementations where the bottom surfacesof the gate segments 106A1 and 106A2 are generally coplanar with the topsurface of an isolation region 109, the trench bottom 128 is coplanar orbelow the top surface of the isolation region 109. In some embodiments,the isolation region 109 is sometimes referred to as a shallow trenchisolation (STI) and may include silicon oxide (SiO₂), silicon nitride(SiN), silicon oxynitride (SiON), fluoride-doped silicate glass (FSG), alow-k dielectric material, and/or other suitable insulating material. Inan embodiment, the isolation region 109 is formed by etching trenches inthe substrate 102 (e.g., as part of the process of forming the first andsecond fin structures 104A and 104B), filling the trenches with aninsulating material using chemical vapor deposition (CVD), andperforming a chemical mechanical planarization (CMP) process to thesubstrate 102 and the insulating material. Other types of isolationstructure may also be suitable, such as field oxide and LOCal Oxidationof Silicon (LOCOS).

In some embodiments represented by FIG. 4A, the trench 118's top openingis wider than its trench bottom 128 and sidewalls of the trench 118 istapered. The tapering can be attributed to the etching process oretchant used to perform the metal gate cut. As shown in FIG. 4A, thetapered sidewalls of the trench 118 exposes a sidewall of the gatesegment 106A1, and a sidewall of the gate segment 106A2. In particular,the exposed sidewalls of the gate segments 106A1 and 106A2 include adielectric interfacial layer and a gate dielectric layer near the trenchbottom 128. As discussed above with respect to the gate stacks 106A and106B, the dielectric interfacial layer includes silicon oxide (SiO₂) orsilicon oxynitride (SiON) and the gate dielectric layer includes high-Kmetal oxides, such as hafnium oxide (HfO₂), zirconium oxide (ZrO₂),lanthanum oxide (La₂O₃), titanium oxide (TiO₂), yttrium oxide (Y₂O₃),strontium titanate (SrTiO₃), other suitable metal-oxides. Therefore, asboth the dielectric interfacial layer and the gate dielectric layercontain oxygen, they can be referred to jointly as an exposedoxygen-containing portion 112. Compared to the exposed oxygen-containingportion 112, the rest of the exposed sidewalls of the gate segments106A1 and 106A2 include metals, metal nitrides, metal carbide nitrides,and metal silicide nitrides and are substantially free of oxygen or freeof oxygen atoms.

Referring now to FIG. 4B, shown therein is a cross-sectional view of theILD 103 along the “y-z” plane substantially parallel to a plane definedby section BB′ of FIG. 3. In embodiments represented by FIG. 4B, thetrench 118 extends between the first S/D feature 105A and the second S/Dfeature 105B. The first S/D feature 105A is formed over the first finstructure 104A and the second S/D feature 105B is formed over the secondfin structure 104B. As described above, both the ILD 103 and STI 109 canbe formed of materials that contain oxygen, such as silicon oxide(SiO₂), silicon nitride (SiN), silicon oxynitride (SiON).

At operation 16 (FIG. 1A) of the method 10, as shown in FIGS. 5A and 5B,a treatment 200 is performed to the structure of the semiconductordevice 100 such that uncovered surfaces of the oxygen-containingdielectric layer 103 (the ILD 103) include hydroxyl group (OH). In someembodiments, the treatment 200 includes use of plasma of an inert gas,such as argon (Ar), and a hydrogen-containing gas or reagent, such ashydrogen gas (H₂), water vapor and silane. In instances where Ar plasmaand hydrogen are used for the operation 16, the treatment 200 can bereferred to as a treatment by Ar—H₂ plasma. In some other embodiments,the hydrogen-containing gas is allowed to react with surfaces of theoxygen-containing dielectric layer 103 (the ILD 103) without the use ofan inert gas plasma. In some implementations, hydroxyl groups also formon the exposed oxygen-containing portion 112 of the gate stacks 106A and106B during the treatment process 200. With the exception of the exposedoxygen-containing portion 112, the treatment 200 performed at theoperation 16 does not form any hydroxyl groups on exposed sidewalls ofthe gate segments 106A1 and 106A2. In embodiments of the presentdisclosure, the treatment 200 is selected such that no hydroxyl groupsare formed on surfaces of metals, metal nitrides, metal carbidenitrides, and metal silicide nitrides. Because work function layers andgate electrode layers of the gate segments 106A1 and 106A2 include onlymetals, metal nitrides, metal carbide nitrides, and metal silicidenitrides, during and upon completion of the treatment process, nohydroxyl group is formed on exposed surfaces of the work function layersand gate electrode layers of the gate segments 106A1 and 106A2.

Referring now to FIGS. 6A and 6B, the operation 18 (FIG. 1A) of themethod 10 includes soaking the structure of the semiconductor device 100with an inhibitor 300 bondable to hydroxyl groups. In some embodiments,the inhibitor 300 is mixed with and transported by a carrier gas, suchas argon, nitrogen, or other suitable inert gas. In some embodiments,the inhibitor 300 is designed and configured to bond to the hydroxylgroups on exposed surfaces of the oxygen-containing dielectric layer 103(or the ILD 103) and the exposed oxygen-containing portion 112. In someimplementations, the inhibitor 300 is in its gaseous phase under theprocess conditions of the operation 18 and can include an exemplarygeneral chemical formula of SiR₃L, where R denotes an alkyl group and Ldenotes a detachable group. In some implementations, the pressure of theinhibitor soaking process at the operation 18 falls within a rangebetween 5 torr to 100 torr. Examples of inhibitors 300 with theforegoing general chemical formula include N-Trimethylsilylpyrrole(C₇H₁₃NSi), octadecyltrichlorosilane (ODTS, C₁₈H₃₇Cl₃Si), ortrimethylchlorosilane (TMCS, also known as trimethylsilylchloride,(CH₃)₃SiCl). The inhibitor 300 can form a covalent bond or a hydrogenbond with the hydroxyl groups on exposed surface of the ILD 103 or theexposed oxygen-containing portion 112. In instances where a covalentbond is formed, the detachable group will form a compound with thehydroxyl group or the hydrogen atom of the hydroxyl group while the restof the inhibitor 300 is bonded to the surfaces. For example, in caseswhere in the inhibitor 300 is trimethylsilylchloride, chloride is thedetachable group that can form hydrogen chloride with the hydrogen atomof the hydroxyl group, while the trimethylsilyl group is bonded to theexposed surfaces of the ILD 103 and the exposed oxygen-containingportion 112. The inhibitors 300 can occupy reaction sites, such asdangling bonds or hydroxyl functional groups, on surfaces they arebonded to and sterically hinder precursors of oxygen-free dielectricmaterials (such as silicon nitride and silicon carbide nitride) frombonding to the same surfaces. Because inhibitors 300 are only bonded tosurfaces with hydroxyl bonds and surfaces of work function layers andgate electrode layers are free of hydroxyl bonds, no inhibitors 300 arebonded to exposed surfaces of the work function layers and gateelectrode layers to hinder deposition of oxygen-free dielectricmaterials, such as silicon nitride and silicon carbide nitride. In someembodiments, the inhibitor soaking process at the operation 18 can lastfor 10 to 40 minutes. In some implementations, the inhibitor soakingprocess at the operation 18 is performed at a temperature between 350°C. and 550° C.

Referring now to FIGS. 7A, 7B, and 7C, at the operation 20, anoxygen-atom free dielectric material is deposited over the semiconductordevice 100 to form the first dielectric layer 116. Reference is now madeto FIG. 7A. Except for the exposed oxygen-containing portion 112, thetop surfaces and sidewalls of the gate segments 106A1 and 106A2 compriseof oxygen-free surfaces made of metals, metal nitrides, metal carbidenitrides, and metal silicide nitrides. As no hydroxyl groups can becreated on these oxygen-free surfaces by the treatment at the operation18, inhibitors 300 do not bond to these surfaces. That is, at theoperation 20, the oxygen-free dielectric materials can be deposited onthe top surfaces and sidewalls of the gate segments 106A1 and 106A2,with the exception of the exposed oxygen-containing portion 112. This isso because, at the operation 118, inhibitors 300 are allowed to bond tothe exposed sidewalls of the exposed oxygen-containing portion 112 inthe trench 118 and the inhibitors 300 sterically hinder deposition ofoxygen-free dielectric materials thereon. Deposition of the oxygen-freedielectric materials results in the first dielectric layer 116 on topsurfaces of the gate segments 106A1 and 106A2 and on sidewalls of thegate segments 106A1 and 106A2 exposed in the trench 118. In someembodiments, the oxygen-free dielectric material is silicon nitride.Because the trench 118 can be as narrow as tens of nanometers, adeposition method with better trench-filling ability is used. In someinstances, the oxygen-free dielectric material is deposited using atomiclayer deposition (ALD) or plasma-enhanced atomic layer deposition(PE-ALD). In some embodiments represented by FIG. 7A, the trench 118 isonly partially filled by the oxygen-free dielectric material, leavingbehind a narrower trench feature within the trench 118. As also shown inFIG. 7A, because inhibitors 300 are bonded to the exposedoxygen-containing portion 112 and form a steric hindrance layer 121 overthe exposed oxygen-containing portion 112, the oxygen-free dielectricmaterial cannot be deposited on the exposed oxygen-containing portion112. The exposed oxygen-containing portion 112 is therefore not indirect contact with the oxygen-free dielectric materials. In some otherembodiments represented by FIG. 7B, the trench 118 is completely filledby the oxygen-free dielectric material. Similar to the embodimentsrepresented by FIG. 7A, the steric hindrance layer 121 prevents theoxygen-free dielectric material from being deposited on the exposedoxygen-containing portion 112. Even if the trench 118 filled with theoxygen-free dielectric material, the structure of the oxygen-freematerial near the exposed oxygen-containing portion can includeimperfections such as voids and lattice defects due to the presence ofthe steric hindrance layer 121. Therefore, in FIG. 7B, the firstdielectric layer 116 is shown as being not in direct contact with theexposed oxygen-containing portion 112.

FIG. 7C illustrates a cross-sectional view of a portion of the ILD 103between the S/D features 105A and 105B along a “y-z” plane substantiallyparallel to a plane defined by section BB′ of FIG. 3. Unlike the gatesegments 106A1 and 106A2, the exposed surfaces of the ILD 103 are bondedto inhibitors 300 at the operation 18 and the oxygen-free dielectricmaterial, such as silicon nitride and silicon carbide nitride, isprevented from being deposited thereon. Therefore, as shown in FIG. 7C,the trench 118 within the ILD 103 remains unfilled and the top surfaceof the ILD 103 is also not covered by the oxygen-free dielectricmaterial. As shown in FIG. 7C, the trench 118 includes a bottom trenchwidth W1, a trench height H1, and a trench opening width W2. In someembodiments, the bottom trench width W1 and the trench opening width W2can be substantially the same and the aspect ratio of the trench 118 mayrange from 3 to 10, such as from 4 to 8, or from 5 to 7. In thoseembodiments, the trench height H1 is between 90 nm and 140 nm and thebottom trench width W1 and the trench opening width W2 both rangebetween 5 nm and 30 nm. In some other embodiments, the trench openingwidth W2 is larger than the bottom trench width W1. In thoseembodiments, the sidewalls of the trench 118 are tapered. In someinstances, the sidewalls of the trench 118 are tapered at a taperingangle ranging from 1° (degree) to 10° (degree). In those embodiments,the bottom trench width W1 is between 5 nm and 15 nm, the trench heightH1 is between 90 nm and 140 nm, and the trench opening width W2 isbetween 20 nm and 30 nm.

Referring now to FIGS. 8A, 8B, and 8C, at the operation 22 (FIG. 1B) ofthe method 10, an oxygen-containing dielectric material, such as siliconoxide, is deposited over the semiconductor device 100 to form a seconddielectric layer 113. In some embodiments, because the trench 118, withor without a first dielectric layer 116, can be as narrow as tens ofnanometers, a deposition method with better trench-filling ability isused to deposit the second dielectric layer 113. In some instances, theoxygen-containing dielectric material is deposited using ALD or PE-ALD.As compared to CVD, which is a relatively fast, continuous process withpresence of all reactant gases, ALD and PE-ALD are relatively slowprocess with deposition cycles with separate reactant gas delivery. As aresult, as compared to a material layer formed using CVD, a materiallayer formed using ALD has better thickness control, greater conformityto the topography of the underlying surfaces, less discontinuity causedby nucleation, and lower stress level. Taking silicon oxide (SiO₂) as anexample, as compared to silicon oxide layer formed using CVD, siliconoxide layer formed using ALD has better thickness control, greaterconformity to the topography of the underlying surfaces, lessdiscontinuity caused by nucleation, and lower stress level. As a resultof the use of ALD or PE-ALD process, the second dielectric layer 113 isdifferent from the isolation region 109 in terms of conformity,continuity and stress level. In embodiments where the trench 118 betweenthe gate segments 106A1 and 106A2 is partially filled by the oxygen-freedielectric material (the first dielectric layer 116), as represented byFIG. 8A, the oxygen-containing material fills in the residual space ofthe trench 118 between the gate segments 106A1 and 106A2 and also coversthe top surfaces of the gate segments 106A1 and 106A2. In otherembodiments where the trench 118 between the gate segments 106A1 and106A2 is completely filled by the oxygen-free dielectric material (thefirst dielectric layer 116), as represented by FIG. 8B, theoxygen-containing material covers the top surfaces of the gate segments106A1 and 106A2. As shown in FIG. 8C, at the operation 22, the trench118 between the first and second S/D features 105A and 105B within theILD 103 is filled with the oxygen-containing material and the topsurface of the ILD 103 is covered by the oxygen-containing material.During the operation 22, sometimes the oxygen-containing dielectricmaterial can block the top opening of the trench 118 before the trench118 is completely filled with the oxygen-containing material. Therefore,in some embodiments, there can be a sheet-like void in the trench 118between the first and second S/D features 105A and 105B. Along theviewing direction of the cross-sectional view of FIG. 8C, the sheet-likevoid has an appearance of a slit. In embodiments shown in FIG. 8A, atoperation 22, the steric hindrance layer 121 formed of the inhibitors300 is converted to the oxygen-containing material, such as siliconoxide, and becomes part of the second dielectric layer 113. Inembodiments shown in FIG. 8B, at operation 22, the steric hindrancelayer 121 formed of the inhibitors 300 is also converted to theoxygen-containing material, such as silicon oxide.

Referring now to FIGS. 9A, 9B, and 9C, at operation 24 (FIG. 1B), a CMPprocess is performed to planarize the top surface of the semiconductordevice 100 and expose the top surfaces of the gate segments 106A1 and106A2. In some embodiments represented by FIG. 9A, the trench 118 isfilled with both the first dielectric layer 116 and the seconddielectric layer 113, with the first dielectric layer 116 covering thesidewalls of the gate segments 106A1 and 106A2. Because the firstdielectric layer 116 is formed of an oxygen-free dielectric material,the sidewalls of the gate segments 106A1 and 106A2 are not in directcontact with the oxygen-containing dielectric material that forms thesecond dielectric layer 113. In some other embodiments represented byFIG. 9B, the first dielectric layer 116 completely fills the trench 118between the gate segments 106A1 and 106A2. As shown in FIG. 9C, the CMPprocess performed at the operation 24 leaves the trench 118 between thefirst and second S/D features 105A and 105B filled with the seconddielectric layer 113. As discussed above with respect to FIG. 8C,sometimes the trench 118 between the first and second S/D features 105Aand 105 is not completely filled by the oxygen-containing material. Itcan also include a sheet-like void, shown as a slit in FIG. 9C.

In some embodiments represented by FIG. 9A, gate stacks 106A and 106Binclude a thickness H2, which includes a total thickness H3 for thedielectric interfacial layers and gate dielectric layers. In someimplementations, the ratio of the thickness H3 over the thickness H2 isbetween 5 and 20, such as between 7 and 14. In some instances, thethickness H2 falls within a range between 70 nm and 100 nm. In someimplementations, the thickness H3 falls within a range between 5 nm and10 nm.

Reference is now made to FIGS. 10A, 10B, and 10C. At operation 26 (FIG.1B), a silicon nitride layer 126 is deposited over the semiconductordevice 100 after its top surfaces are planarized at the operation 24,including over the top surfaces of the gate segments 106A1 and 106A2.Because the silicon nitride layer 126 is to be deposited on a planarizedsurface, it can be deposited using methods with or without trenchfilling capabilities. In some embodiments, the silicon nitride layer 126can be deposited by CVD or plasma-enhanced CVD (PECVD).

As shown in FIGS. 11A, 11B, and 11C, at operation 28 (FIG. 1B), asilicon oxide layer 123 is deposited over the silicon nitride layer 126on the semiconductor device 100. Because the silicon oxide layer 123 isto be deposited on a substantially planarized surface, it can bedeposited using methods with or without trench filling capabilities. Insome embodiments, the silicon oxide layer 123 can be deposited by CVD orPECVD.

In embodiments of the present disclosure, with respect to the trench118, the gate segments 106A1 and 106A1 are separated by an isolationfeature different from another isolation feature present within the ILD103. As shown in FIGS. 11A and 11B, the gate segments 106A1 and 106A2are separated by a first isolation feature 400. The first isolationfeature 400 may comprise the second dielectric layer 113 sandwichedbetween two first dielectric layer 116, as illustrated in FIG. 11A, orthe first dielectric layer 116 alone, as illustrated in FIG. 11B. Ineither case, the work function layers and gate electrode layers in thegate segments 106A1 and 106A2 are not in contact with theoxygen-containing dielectric material that forms the second dielectriclayer. In some implementations, the second dielectric layer 113 is incontact with the inhibitors 300 bonded on the exposed oxygen-containingportion 112. In some other implementations, the inhibitor 300 bonded onthe exposed oxygen-containing portion 112 is oxidized and converted tosilicon oxide. In embodiments represented by FIG. 11B, while theoxygen-free dielectric material is not in direct contact with exposedoxygen-containing portion 112, the first dielectric layer 11 includes atip 122 that extends between the exposed oxygen-containing portions 112of the gate segments 106A1 and 106A2. The tip 122 is separated from theexposed oxygen-containing portion 112 by a layer formed of theinhibitors 300 bonded thereon or a silicon oxide layer converted fromthe inhibitors 300 during the formation of the second dielectric layer113. In contrast, as shown in FIG. 11C, the trench 118 between the firstand second S/D features 105A and 105B is filled with a second isolationfeature 500. In some embodiments, the second isolation feature 500includes inhibitors 300 bonded on the sidewalls of the ILD 103 and theoxygen-containing material that forms the second dielectric layer 113.In some implementations, the inhibitors 300 bonded on the sidewalls ofthe ILD 103 may be converted to silicon oxide during the formation ofthe second dielectric layer 113. Compared to the first isolation feature400, the second isolation feature 500 is free of the oxygen-freedielectric material, such as silicon nitride or silicon carbide nitride.

At operation 30 (FIG. 1B) of the method 10, the first and second S/Dfeatures 105A and 105B are exposed. As shown in FIGS. 12A and 12B, anS/D contact pattern 138 can be used for the operation 30. Along adirection generally perpendicular to the substrate 102, the S/D contactpattern 138 is over the first and second S/D features 105A and 105B andthe trench 118 therebetween. In some embodiments, the area outside ofthe S/D contact pattern is masked, and an etching process is performedto remove the silicon oxide layer 123, the second dielectric layer 113and the ILD 103 under the S/D contact pattern. Referring now to FIG.13C, a contact trench 140 can be formed at the operation 30. In someembodiments, at least a part of the S/D feature 105A and a part of theS/D feature 105B are exposed in the contact trench 140. As shown inFIGS. 13A and 13B, because the area outside the S/D contact pattern ismasked during the formation of the contact trench 140, the silicon oxidelayer 123 over the gate segments 106A1 and 106A2 is not etched duringthe operation 30. If the trench 118 between the S/D features 105A and105B is not covered by the inhibitor 300 at the operation 18 (FIG. 1A),the first dielectric layer 116 would be formed therein. In instanceswhere the first dielectric layer 116 is formed of silicon nitride, thefirst dielectric layer 116 would experience a slower etching as comparedto the second dielectric layer 113 and the ILD 103. In that case, thecontact trench 140 would not include a recess between the first andsecond S/D features 105A and 105B, but would include a hillock extendingabove the first and second S/D features 105A and 105B. The hillock canincrease the contact resistance between a contact feature to be formedin the contact trench 140 and the first and second S/D features 105A and105B.

In some embodiments represented by FIG. 13C, the contact trench 140 caninclude a wider upper portion and a narrower lower portion. In someimplementations, the upper portion and the lower portion can havesidewalls that are substantially vertical to the substrate 102. In thoseimplementations, the upper portion includes a width W3 and the lowerportion includes a width W4. In some embodiments, the width W3 rangesfrom 80 nm to 120 nm. In some embodiments, the width W4 ranges from 20nm to 30 nm. In some instances, W3 is about 2 to 6 times of W4, such as3 to 5 times of W4. In some instances, W4 is about 1.2 to 6 times of W1,such as 2 to 5 times of the bottom trench width W1. In some otherimplementations, the upper and lower portions can each have taperedsidewalls such that the upper and lower portions have wider top openingand narrower bottoms. In some other implementations, the upper and lowerportions have narrower top openings and wider bottoms. In someembodiments represented by FIG. 13C, the upper portion of the contacttrench 140 includes a shoulder 144 and the lower portion of the contacttrench 140 includes a shoulder 145. In some implementations, theshoulders 144 and 145 are rounded as shown in FIG. 13C. In some otherimplementations, the shoulders 144 and 145 can include a 90-degree angleor an angle larger than 90 degrees.

In addition, as shown in FIG. 13C, the contact trench 140 may exposesome surfaces of the S/D features 105A and 105B and extend between theS/D features 105A and 105B in some implementations. In some embodiments,the formation of the contact trench 140 does not remove a bottom portionof the second dielectric layer 113 (hereinafter referred to as thebottom portion 143). The bottom portion 143 is thus positioned betweenthe S/D features 105A and 105B and right below a bottom 142 of the lowerportion of the contact trench 140. Like the second dielectric layer 113,the bottom portion 143 is formed of oxygen-containing dielectricmaterials, such as silicon oxide deposited using ALD or PE-ALDprocesses. In some embodiments, the bottom 142 of the contact trench hasa width between 5 and 15 nm, which can be substantially identical to thebottom trench width W1.

In the embodiments represented by FIG. 13C, the wider upper portion ofthe contact trench 140 includes a depth H4, the lower portion of thecontact trench 140 includes a depth H5, and the bottom portion 143includes a depth H6. In some implementations, the depth H4 rangesbetween 60 and 90 nm, the depth H5 ranges between 20 and 40 nm, and thedepth H6 ranges between 5 and nm. In some instances, the depth H4 isabout 2 to 3 times of the depth H5 and the depth H4 is about 3-10 timesof the depth H6.

Referring to FIG. 14C, at operation 32 (FIG. 1B) of the method 10, anS/D contact 150 is formed within the contact trench 140 by depositing ametal in the contact trench 140. As shown in FIG. 14C, the S/D contacts150 fill the contact trench 140 and cover the top and side surfaces ofthe first and second S/D features 105A and 105B. That is, the S/Dcontact 150 is not only formed over top surfaces 155A and 155B of thefirst and second S/D features 105A and 105B, it also extends between thefirst and second S/D features 105A and 105B. In some embodiments, theS/D contacts 150 may comprise tungsten (W), cobalt (Co), copper (Cu),other elemental metals, metal nitrides such as titanium nitride (TiN),titanium aluminum nitride (TiAlN), tungsten nitride (WN), tantalumnitride (TaN), or combinations thereof, and may be formed by CVD, PVD,plating, and/or other suitable processes. In some embodiments, to reducecontact resistance, a silicide layer can be formed over the first andsecond S/D features 105A and 105B before the S/D contact 150 isdeposited in the contact trench 140. To form a silicide layer, a metallayer is deposited over the first and second S/D features 105A and 105B,then an annealing process is performed to cause reaction between themetal layer and the underlying semiconductor material to form metalsilicide, and excess unreacted metal is removed. In various embodiments,the metal layer may include titanium (Ti), nickel (Ni), cobalt (Co),tantalum (Ta), erbium (Er), yttrium (Y), ytterbium (Yb), platinum (Pt),or combinations thereof.

At operation 34 (FIG. 1B) of the method 10, the semiconductor device 100may continue to undergo further processing to form various features andregions known in the art. For example, subsequent processing may formvarious contacts/vias/lines and multilayers interconnect features (e.g.,metal layers and interlayer dielectrics) on the substrate 102,configured to connect the various features to form a functional circuitthat may include one or more FinFET devices. In furtherance of theexample, a multilayer interconnection may include verticalinterconnects, such as vias or contacts, and horizontal interconnects,such as metal lines. The various interconnection features may employvarious conductive materials including copper, tungsten, and/orsilicide. In one example, a damascene and/or dual damascene process isused to form a copper related multilayer interconnection structure.

Semiconductor devices and methods of fabricating semiconductor devicesare provided. In one embodiment, the present disclosure provides asemiconductor device that includes a first fin structure and a secondfin structure each extending from a substrate; a first gate segment overthe first fin structure and a second gate segment over the second finstructure, the first and second gate segments aligned along a lengthwisedirection; a first isolation feature disposed in a trench extendingalong a direction generally parallel to the first and second finstructures from a top view, wherein the first isolation featureseparates the first and second gate segments; a first source/drain (S/D)feature over the first fin structure and adjacent to the first gatesegment; a second S/D feature over the second fin structure and adjacentto the second gate segment; and a second isolation feature also disposedin the trench. The first and second S/D features are separated by thesecond isolation feature, and a composition of the second isolationfeature is different from a composition of the first isolation feature.

In some embodiments, each of the first fin structure and the second finstructure comprises at least one fin. In some embodiments, the secondisolation feature is free of silicon nitride. In some implementations,the second isolation feature is formed using atomic layer deposition(ALD) and the second isolation feature is surrounded by a thirdisolation feature formed using chemical vapor deposition (CVD). In someembodiments, the first isolation feature includes silicon oxide oversilicon nitride. In some instances, the first isolation feature includessilicon nitride. In some embodiments, the first and second gate segmentseach includes a dielectric layer and a conductive layer, the dielectriclayer is not in contact with silicon nitride of the first isolationfeature, and the conductive layer is in contact with silicon nitride ofthe first isolation feature.

In another embodiment, a method of fabricating a semiconductor device isprovided. The method includes providing a structure, the structureincluding a substrate; a first fin structure and a second fin structureeach extending from the substrate; a first gate segment over the firstfin structure and a second gate segment over the second fin structure,the first and second gate segments extending along a first direction; afirst source/drain (S/D) feature over the first fin structure andadjacent to the first gate segment; a second S/D feature over the secondfin structure and adjacent to the second gate segment; anoxygen-containing dielectric layer over the first and second S/Dfeatures; and a trench extending along a second direction between thefirst and second gate segments and within the oxygen-containingdielectric layer, the trench separating the first and second gatesegments, the second direction being generally perpendicular to thefirst direction, wherein the trench exposes a sidewall of the first gatesegment, a sidewall of the second gate segment, and sidewalls of theoxygen-containing dielectric layer. The method further includes treatingthe exposed sidewall of the first gate segment, the exposed sidewall ofthe second gate segment, and the exposed sidewalls of theoxygen-containing dielectric layer with Ar plasma and ahydrogen-containing reagent, resulting in hydroxyl groups on treatedsidewalls of the oxygen-containing dielectric layer; soaking the treatedsidewall of the first gate segment, the treated sidewall of the secondgate segment, and the treated sidewalls of the oxygen-containingdielectric layer with an inhibitor bondable to hydroxyl groups,resulting in the inhibitor bonded to the sidewalls of theoxygen-containing dielectric layer; and depositing a first dielectriclayer over the trench, wherein the first dielectric layer is formed onsurfaces free of the inhibitor.

In some embodiments, the first dielectric layer includes silicon nitrideand the depositing of the first dielectric layer includes atomic layerdeposition (ALD). In some implementations, the method further includesdepositing a second dielectric layer over the first dielectric layer. Insome embodiments, the second dielectric layer includes silicon oxide. Insome embodiments, the method further includes, after the depositing ofthe second dielectric layer, performing a chemical mechanical polishing(CMP) process to expose top surfaces of the first and second gatesegments. In some implementations, the method further includescomprising depositing a silicon nitride layer over the exposed topsurfaces of the first and second gate segments. In some embodiments, theinhibitor includes a general formula of SiR3L, wherein R denotes analkyl group and L denote a detachable group. In some instances, theinhibitor comprises N-Trimethylsilylpyrrole, octadecyltrichlorosilane,or trimethylchlorosilane. In some embodiments, the soaking with theinhibitor lasts for about 10 to 40 minutes. In some implementations, thesoaking with the inhibitor is performed at a temperature between about350° C. and 550° C.

In yet another embodiment, the present disclosure provides a method offabricating a semiconductor device. The method includes providing astructure, the structure comprising a substrate; a first fin structureand a second fin structure each extending from the substrate; a firstgate segment over the first fin structure and a second gate segment overthe second fin structure, the first and second gate segments alignedalong a lengthwise direction and separated by a trench extending along adirection parallel to the first and second fin structures; a firstsource/drain (S/D) feature over the first fin structure and adjacent tothe first gate segment; a second S/D feature over the second finstructure and adjacent to the second gate segment; and anoxygen-containing dielectric layer over the first and second S/Dfeatures, wherein the trench is also positioned within theoxygen-containing dielectric layer and between the first and second S/Dfeatures. The method further includes performing a treatment process tothe structure such that exposed surfaces of the oxygen-containingdielectric layer comprise hydroxyl groups; soaking the structure with aninhibitor bondable to hydroxyl groups; and depositing a silicon nitridelayer over the structure, wherein the silicon nitride layer is formed onsurfaces that are free of the inhibitor. In some embodiments, theperforming of the treatment process to the structure comprises directingAr—H2 plasma at the structure. In some embodiments, the inhibitorincludes a general formula of SiR3L, wherein R denotes an alkyl groupand L denote a detachable group.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1-7. (canceled)
 8. A method of fabricating a semiconductor device,comprising: providing a structure, the structure comprising: asubstrate; a first fin structure and a second fin structure eachextending from the substrate; a first gate segment over the first finstructure and a second gate segment over the second fin structure, thefirst and second gate segments extending along a first direction; afirst source/drain (S/D) feature over the first fin structure andadjacent to the first gate segment; a second S/D feature over the secondfin structure and adjacent to the second gate segment; anoxygen-containing dielectric layer over the first and second S/Dfeatures; and a trench extending along a second direction between thefirst and second gate segments and within the oxygen-containingdielectric layer, the trench separating the first and second gatesegments, the second direction being generally perpendicular to thefirst direction, wherein the trench exposes a sidewall of the first gatesegment, a sidewall of the second gate segment, and sidewalls of theoxygen-containing dielectric layer; treating the exposed sidewall of thefirst gate segment, the exposed sidewall of the second gate segment, andthe exposed sidewalls of the oxygen-containing dielectric layer with Arplasma and a hydrogen-containing reagent, resulting in hydroxyl groupson treated sidewalls of the oxygen-containing dielectric layer; soakingthe treated sidewall of the first gate segment, the treated sidewall ofthe second gate segment, and the treated sidewalls of theoxygen-containing dielectric layer with an inhibitor bondable tohydroxyl groups, resulting in the inhibitor bonded to the sidewalls ofthe oxygen-containing dielectric layer; and after the soaking,depositing a first dielectric layer over the trench, wherein the firstdielectric layer is formed on surfaces free of the inhibitor.
 9. Themethod of claim 8, wherein the first dielectric layer comprises siliconnitride and the depositing of the first dielectric layer includes atomiclayer deposition (ALD).
 10. The method of claim 9, further comprisingdepositing a second dielectric layer over the first dielectric layer,wherein the second dielectric layer is different from the firstdielectric layer.
 11. The method of claim 10, wherein the seconddielectric layer includes silicon oxide.
 12. The method of claim 10,further comprising, after the depositing of the second dielectric layer,performing a chemical mechanical polishing (CMP) process to expose topsurfaces of the first and second gate segments.
 13. The method of claim12, further comprising depositing a silicon nitride layer over theexposed top surfaces of the first and second gate segments.
 14. Themethod of claim 8, wherein the inhibitor comprises a general formula ofSiR3L, wherein R denotes an alkyl group and L denote a detachable group.15. The method of claim 8, wherein the inhibitor comprisesN-Trimethylsilylpyrrole, octadecyltrichlorosilane, ortrimethylchlorosilane.
 16. The method of claim 8, wherein the soakingwith the inhibitor lasts for about 10 to 40 minutes.
 17. The method ofclaim 8, wherein the soaking with the inhibitor is performed at atemperature between about 350° C. and 550° C.
 18. A method offabricating a semiconductor device, comprising: providing a structure,the structure comprising: a substrate; a first fin structure and asecond fin structure each extending from the substrate; a first gatesegment over the first fin structure and a second gate segment over thesecond fin structure, the first and second gate segments aligned along alengthwise direction and separated by a trench extending along adirection parallel to the first and second fin structures; a firstsource/drain (S/D) feature over the first fin structure and adjacent tothe first gate segment; a second S/D feature over the second finstructure and adjacent to the second gate segment; and anoxygen-containing dielectric layer over the first and second S/Dfeatures, wherein the trench is also positioned within theoxygen-containing dielectric layer and between the first and second S/Dfeatures; performing a treatment process to the structure such thatexposed surfaces of the oxygen-containing dielectric layer comprisehydroxyl groups; soaking the structure with an inhibitor bondable tohydroxyl groups; and after the soaking of the structure, depositing asilicon nitride layer over the structure, wherein the silicon nitridelayer is formed on surfaces that are free of the inhibitor.
 19. Themethod of claim 18, wherein the performing of the treatment process tothe structure comprises directing Ar—H₂ plasma at the structure.
 20. Themethod of claim 18, wherein the inhibitor comprises a general formula ofSiR₃L, wherein R denotes an alkyl group and L denote a detachable group.21. A method comprising: providing a structure, the structurecomprising: a substrate; a first fin structure and a second finstructure extending from the substrate, the first fin structure beingparallel to the second fin structure; a gate structure over the firstand second fin structures; a first source/drain (S/D) feature over thefirst fin structure and adjacent to the gate structure; a second S/Dfeature over the second fin structure and adjacent to the gatestructure; a first oxygen-containing dielectric layer over the first andsecond S/D features, the first oxygen-containing dielectric layerdisposed between the first and second S/D features; forming a trenchextending along lengths of and between the first and second finstructures to separate the gate structure into a first gate segment overthe first fin structure and a second gate segment over the second finstructure; the trench crossing the first oxygen-containing dielectriclayer between the first and second S/D features; performing a treatmentprocess to the structure such that exposed surfaces of the firstoxygen-containing dielectric layer comprise hydroxyl groups; soaking thestructure with an inhibitor bondable to the hydroxyl groups; and afterthe soaking of the structure, depositing a nitride-containing dielectriclayer over the structure, wherein the nitride-containing dielectriclayer is formed on surfaces that are free of the inhibitor.
 22. Themethod of claim 21, wherein the nitride-containing dielectric layercomprises silicon nitride or silicon carbide nitride.
 23. The method ofclaim 21, further comprising: depositing a second oxygen-containingdielectric layer over the nitride-containing dielectric layer.
 24. Themethod of claim 23, further comprising: after depositing the secondoxygen-containing dielectric layer, performing a chemical mechanicalpolishing (CMP) process to expose top surfaces of the first and secondgate segments.
 25. The method of claim 21, wherein the inhibitorcomprises a general formula of SiR₃L, wherein R denotes an alkyl groupand L denote a detachable group.
 26. The method of claim 21, wherein theinhibitor comprises N-Trimethylsilylpyrrole, octadecyltrichlorosilane,or trimethylchlorosilane.
 27. The method of claim 21, wherein thesoaking with the inhibitor is performed at a temperature between about350° C. and 550° C.